Datasheet endurance is not always a hard limit for NAND. In our latest characterization with the NanoCycler, we cycled mainstream 3D TLC NAND far beyond its rated endurance and tracked how error rates evolve with cycling and retention.
Our new article looks at how characterization has to scale from single devices to full arrays, and how the TESTMESH platform (TMA-100 for array-level RRAM testing, TXU-CROSSBAR for analog vector-matrix multiplication) was built for exactly that gap between lab flexibility and array-scale speed.
Our new article looks at how characterization has to scale from single devices to full arrays, and how the TESTMESH platform (TMA-100 for array-level RRAM testing, TXU-CROSSBAR for analog vector-matrix multiplication) was built for exactly that gap between lab flexibility and array-scale speed.
Our latest article walks through the progression from cell, to array, to analog compute function, to macro, and what it means for test instrumentation at each stage, including how our TESTMESH platform (and the TXU-CROSSBAR extension) adapts to it.
As QLC NAND pushes densities higher, voltage margins keep shrinking. The article explores how endurance, retention and 3D NAND architecture drive SSD reliability, and how tools like our NanoCycler and BarnieMAT turn raw measurements into real engineering insight.
As NAND Flash devices continue to evolve toward higher densities and increasingly sophisticated programming algorithms, characterization software must evolve at the same pace. New test methods often require modifications to complex software libraries that have been developed and validated over many years. Maintaining compatibility with existing devices while introducing new functionality is therefore a major engineering challenge.
A tester conceived for NVM technologies can achieve 1,000x time reduction over a system with general-purpose instrumentation.
Engineering productivity is essential to obtaining fast time-to-result when validating new designs or understanding failure mechanisms of semiconductor devices. Learn about how NplusT’s test and characterization systems support technology and product engineers to work efficiently.
The characterization and reliability evolution of novel non-volatile memory technologies sets different challenges in the various stages of the development. Learn more about the special requirements and about NplusT’s TESTMESH platform, aiming at providing the optimal solution for each of such stages.
Understanding reliability, endurance, and characteristics over the lifetime of emerging non-volatile memory technologies is a challenging task, especially when considering an extremely high endurance target. TESTMESH has been designed to perform such tasks extremely fast, shortening time-to-result and enabling high-quality technology data in reasonable times.
Say goodbye to cumbersome setups and engineering headaches! TESTMESH TMA-100 is a game changer, it offers a compact, ready-to-use solution for characterization of non-volatile memory cells and arrays.
Power Management and Power Integrity are crucial for reliable storage systems. Read how NanoCycler-HS offers the most accurate NAND power characterization and analysis for reliable solid-state storage power design solutions.
Safeguarding data reliability becomes more challenging as digital data meets harsh environments. NplusT is augmenting the NanoCycler product line to characterize NAND devices in extreme temperatures, catering to mission-critical storage requirements in Industrial, Automotive, Aerospace, and other harsh environment applications.
This experiment demonstrates the capabilities of BarnieMAT to work on significantly increased quantity of memory array test data.
High endurance is often the primary target when developing a new non-volatile memory technology. The validation within reasonable time might be challenging. The approach presented here – based on NplusT’s TESTMESH – offers an efficient solution without increasing the complexity of the silicon design.
NanoCycler is extending the NAND characterization into the storage system space to provide customers with critical information to develop better products optimized to application requirements.
NAND memory is part of a bigger ecosystem that must be taken into account by the NAND characterization procedures.
Understanding NAND error characteristics over lifetime and workloads are imperative in today’s high-performance and high data reliability solid-state storage systems environment.
NanoCycler provides a comprehensive solution to characterize flash endurance, retention, and disturbances for up to the latest 200+ layers ONFi5 3D NAND.
When communicating with ONFi5 NAND devices at 2.4 GT/sec, interface bit errors might occur. NanoCycler HS24 ensures to keep the bit errors below the threshold in order not to impact the characterization of the NAND array. Read how.
Whenever you are evaluating your new memory technology or you are bringing up your new product towards the target production yield, you need efficient software which helps you in understanding your test data.
BarnieMAT has been created for just this purpose.
How NanoCycler can help making a perfect SSD from imperfect NANDs
Whenever you are evaluating a new memory technology for your upcoming solid-state storage product, or you are getting ready to qualify a new product to ramp up production with quality, reliability, and yield targets, you need an efficient and productive system that can deliver deep, detailed information about the NAND through every stage.
NanoCycler’s features and scalability help users tailor the equipment configuration based on their current requirement and easily extend the system as the capacity need grows. Find out how.
How NanoCycler can help making a perfect SSD from imperfect NANDs